Dear All, I hope you are doing well and safe. I need to clarify the ALD deposition process on different types of surfaces. Suppose we want to deposit Al2O3 from the TH or PE ALD process on the CVD grown MoS2 2D surface. Consider a situation where the substrate (MoS2) is free from the dangling bonds. In this situation, can we use the ALD process to deposit an ultra-thin Al2O3 layer (say 1 or 2 nm)? Please help me understand the ALD growth behaviour on this kind of deposition. Thank you Ashish