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Questions related from Yue Wang
There have some papers say that Anderson localized insulator follows the expression: ln(ρ) = A (T-1/4) : (Anderson-Mott transition induced by hole doping in Nd1−xTiO3 Phys. Rev. B 74, 104419...
18 April 2017 8,057 2 View
For the transition from insulator to metal, there have different transition mechanisms. How to distinguish Anderson transition (Anderson insulator was induced by the disorder-induced localization...
01 January 1970 342 6 View
We know the ReRAM based on the mechanism of conductive filament has the forming process which need a high voltage to induce. For some ReRAM based on Mott transition, such as PCMO (Sci. Rep. 2013....
01 January 1970 4,884 1 View
excitonic Mott transition Ref paper: PRL, 107, 236405 (2011) Is the Mott criterion valid for Mott–Hubbard transition system?
01 January 1970 2,177 1 View
Without taking the interaction into account, each site could be occupied by two electrons, one with spin up and one with spin down. Due to the interaction the electrons would then feel a strong...
01 January 1970 4,739 8 View
Anderson localization insulator can be induced by defect disorder, such as impurity atoms, atom vacancies and so on. Does anyone know the limited concentration value of defect disorder (such as...
01 January 1970 6,221 8 View
We know Mott insulator to metal transition (Mott IMT) can be induced by temperature, pressure or electric field. For the temperature driving Mott insulator resistive switching, such as VxOy (Phys....
01 January 1970 3,125 2 View
For Mott insulator, there are some methods to change it into metal. What is the mechanism of Mott insulator transform into metal under the change of temperature?
01 January 1970 8,404 6 View