Venkanna Kanneboina

6 Questions 18 Answers 0 Followers

Questions related from Venkanna Kanneboina

Please explain How to draw band bending diagram of IBC-SHJ solar cells ? How to explain charge transportation through band bending diagram ?

In IBC-SHJ solar cells, ARC is deposited on front side of c-Si and both emitter (i-a-Si:H / p-type a-Si:H / TCO / metal) and back surface filed (BSF)(i-a-Si:H /n-type a-Si:H / TCO / metal) were...

02 November 2018 5,892 5 View

Can anyone suggest how to improve c-Si/a-Si:H solar cell efficiency?

I have fabricated Ag/p a-Si:H/i a-Si:H/p-c-Si/i a-Si:H/n a-Si:H/ITO/Ag solar cell by PECVD, i a-SI:H layer thickness iis about 5 nm, p,n a-Si:H thickness is about 10nm, ITO (by sputtering)is 80nm...

22 May 2016 3,063 13 View

Can any one tell what is this error In AFORS HET 2.4.1 software ?

While using AFORS HET 2.4.1 software one error is coming, I could not understand that error, I have attached here error jpg file . Any one have user manual of this software ?

10 November 2014 5,560 6 View

Can any one please explain how to choose Tuac-Loretnz parameters (A,E0, C, Eg etc) for spectroscopic ellipsometry(a-Si:H film) ?

I want to fit Tauc-Lorentz model for measuring film thickness, refractive index, Band gap and imaginary part of dilectric constant etc. of a-Si:H film using spectroscopic ellipsometry (im using...

20 October 2014 1,691 2 View

Can anyone explain how to analyze Spectroscopic ellipsometry data for a-Si:H films?

Please anyone can explain how to analyze Spectroscopic ellipsometry data for a-Si:H films ? band gap, thickness and refractive index etc ? which model will suitable and how to fit with that model...

25 August 2014 9,264 4 View

Why is an epitaxial layer formed while depositing a-Si:H on c-Si substrate?

An epitaxial layer is growing when we are using low working pressure, low rf (radio frequency) power and high substrate temperature. Why is this epitaxial layer growing? What are the reasons for...

16 July 2014 2,857 4 View