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I have fabricated Ag/p a-Si:H/i a-Si:H/p-c-Si/i a-Si:H/n a-Si:H/ITO/Ag solar cell by PECVD, i a-SI:H layer thickness iis about 5 nm, p,n a-Si:H thickness is about 10nm, ITO (by sputtering)is 80nm...
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