3 Questions 3 Answers 0 Followers
Questions related from Rochelle Lee
I measuring the IV characteristics of InAsP nanowires. The InAsP nanowires are deposited on Si/SiO2 substrate and Ti/Ni(10/150nm) are deposited by electron beam evaporation for metal electrode. I...
17 January 2017 3,856 3 View
I have attached my input file for deckbuild and current structure. As well as intended structure. code for structure: go atlas TITLE device simulation mesh space.mult=1.0 x.mesh loc=0...
08 June 2016 557 1 View
After vewing results in tonyplot I am sure something is wrong with the device structure but I am not sure what. I would really appreciate any help. Thank you. I have attached the device I created...
31 May 2016 3,710 6 View