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Questions related from Abdul kaium Mia
I am trying to minimize the gate leakage current of a FET devices and found that hBN is a good dielectric for 2D materials (MoS2, WS2) based FETs. I was curious if we can deposite it by e beam...
30 October 2023 7,252 0 View
I am working on the fabrication of Bio-FET. I am looking for some software where I can model and silumate my device.
18 July 2021 10,168 4 View
I want to measure a solution's IV characteristics, So I want to have a passivation layer so that the solution does not contact the electrodes directly. I have Two option 1. SU-8 negative...
04 July 2021 8,461 1 View
I made a back gated FET, I have taken the gate contact via scratching the top SiO2 layer and deposited Al on it. While I am measuring the Vd vs Id as a function of gate voltage, The gate current...
01 January 1970 7,393 4 View