Dear all,
I am requesting you all to give me answer/reason for the following question?
Why static power increases with the increment of temperature in CMOS memory circuits or CMOS circuits? What is the relation between temperature and static power? why static power increasing with temperature in most of the memory circuits for example in content addressable memory (CAM)?
Thank you in advance.
As we know that 10 mili volts can change 1 degree centigrade ... it may related with this.
Sir
there are various static power components. From that which one you meant for.
There are a variety of circuits for CMOS memory cell in static and dynamic memories. Although in your question it is not known about the memory cell details, however the question can be answered in general. By increasing temperature: (1) The threshold voltage of transistors decreases which result in the drain current even the transistor is off. (2) the gate leakage current increases. (3) The sub-threshold current is also increases. If you multiply all these increased currents to the relevant supply voltage (or and input voltage that current flows from) you get the increased static power dissipation. In fact delta P = sigma (delta I)* Vdd. Even in dynamic memories, increasing temperature cause static power increase.
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