I am looking for literature data about DLTS or simmilar measuremants for III-V IR materials. I have seen many articles about DLTS on quantum dots for InAs. I am more interested in bulk meterials for IR photodetectors. Is it less interesting or somehow difficult to performe?
Probably because, due to the smaller gap, in quantum dots is easier to excite in-gap states. Another explanation could be the fact that, in the DLTS technique, the only sensitive volume corresponds to the space charge region (the active part of the detector), where the device is mostly composed by the QDs you mentioned, rather than bulk material.
Dear Kacper,
it all depends in what you are interested in. If it electrically active deep levels, then a better technique is Electrical Impedance Spectroscopy rather than DLTS. It gives you both the density as well as other characteristics (DLTS) of the deep level in question. If it is other deep levels, then the photoluminescence would be a technique to use.
I do not see any reason why deep level characterisation should be more difficult in the bulk. But Marco is right that in order to "see" them, the energy level in question has to cross the electrochemical potential of the device.
With best regards
Petr
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