Hi,
I made a Metal-GaN structure in Silvaco TCAD. GaN was doped to a level of 1E17. Also I modeled with and without heavy doping of the near-contact region of the semiconductor for created ohmic contacts. There was no work function specified at electrode (neutral): manual calls this an ohmic contact.
During simulation I had to use "solve init" command, which forced the electrodes on either side to assume a voltage of zero volts. After simulation of the zero volt situation I found that there was a constant potential inside GaN (about +1.6 V) with respect to the metal electrode.
If there are no net charges in semiconductor - electrode, why should there be any potential in either of them?
Please let me know if you have come across this. I am attaching the image of the str file and the potential cutline.
Thanks in advance
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