I deposited amorphous F doped al203 on quartz and SI substrate and check the band gap is around 5.3eV .it is working very well for photoelectrochemical cell on SI substrate and it was failed on quartz substrate for photodetector .I used TI/Al as ohmic contact for photodetector .the thickness is above 250nm .I hope the photo current is not substrate in case of photo electrochemical cell .can you please suggest your view ? Why this happen ?

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