I want to work on the following topics with the following specifications :
Channel Length = 30 nm , R Channel = 10 nm , Doping of source/drain ~ 1016-1020 , Channel Doping ~ 1010 - 1016
1. I want to work on Gate All Around MOSFET
2. I want to work on Gate All Around MOSFET biosensor
Which models must be included in the ATLAS script in first and second part? Kindly suggest if someone have worked on it.
With different models, result comes out to be different and in different papers, a variety of model have been used. So, I am bit confused.
Dear Amit Das ,
If you are making research I think you can yourself choose the most appropriate model either by trial and error or by by developing a rigorous theory for the device.
From the engineering view, you start with the simplest model then you superimpose on it the second order effects.
For example one can use the drift diffusion model to solve for the electronic devices till quantum effects appear in the small size devices, then one has tunneling into consideration.
As a student I would like to detect the boundary by my self or by consulting the literature.
Best wishes
Dear Abdelhalim abdelnaby Zekry sir,
I have tried different combinations that have been specified in different articles but each combination is giving a different value of threshold voltage and subthreshold slope.
For example - combination of model A + B gives Vt=0.71 V whereas combination of model C+D gives Vt=1.1 V.
I am just not able to understand which combination should be used for the set of values specified in the question and which will be a more realistic value.
Dear Amit,
There exist so many models for physical parameters, such as drift mobility, impact ionization rate, generation-recombination rate, thermal conductivity, etc... and each model has its own parameters, which are usually temperature dependent. Therefore, there exist thousands of parameters to be determined in your script. In order to obtain good results, you'd choose the proper models and parameters, which coincide with your specific device. However, you can start with simple scripts, with default parameters, and then step-by-step add more detailed physical models. You can also start with ready examples scripts, from Sentaurus Device.
Thank you Muhammad Hamza El-Saba sir for the answer.
I want a suggestion. Like we prefer a low threshold voltage value and suppose model A+model B gives me a Vt=0.6 V. But the device has a high doping in which I have to include model C too but after including it, Vt changes to 0.9V. Then, how would I chose that which set of models are right?
Set X : Model A+B(default models) gives a lower Vt
Set Y : Model A+B+C gives a high Vt but is more closed to reality.
Can I go with set X or set Y for my research article?
I will be thankful if you can suggest me something about it.
Dear Amit,
I really feel and understand the problem of choosing between a wide range of options, because I met it before. However, once you get acquainted with the main parameters that influence your device and their average values, you can make a template script for your device(s). Therefore, you can make patch processing of several devices (or same device with different options) to assess their influence.
Final important note: The knowledge of the defining equations (e.g., the threshold voltage and its relation to doping) and their physical parameters will help you a lot to compromise between their values.
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