I have been working on n-Si/Metal Oxide hybrid heterojunction solar cells recently and MoOx seems like a promising p-type material for the completion of the structure. Yet I am wondering if it is necessary to anneal the evaporated MoOx upto a certain temperature. The planned structure consists of n type si with silver back contact. Then continues with MoOx and the top contact, Ag once again. No passivation is planned.
The evaporated MoOx thin films are obtained by heating up MoOx materials inside a source with very high temperature. I don't think it is necessary to anneal the layer. If you have a doubt about any difference between annealing and no annealing on the performance of a cell, you can plan a systematic study. It may worthwhile doing so from scientific point view.
You can pre-heat the samples inside the process chamber for 1Hr in 150 to 200 degree centigrade before deposition and keep the same temp during the evaporation process (if possible). For better performance you shouldn't increase the deposition rate beyond 0.3nm/Sec.
Wish you a success in your research.
For this kind of work ( n-Si/Metal Oxide hybrid heterojunction solar cells) the work function of the deposited MoOx layer is very important which can vary with temperature. The process vacuum is one of the important parameter. A system which can evaporate the Al or Ag That can be used for the MoOx deposition. This is a n-type material . This kind of structure is known as carrier selective solar cell. The inversion layer formed between the MoOx and the Si wafer is responsible for the built-in potential formation or Voc. If you anneal the device it may degrade, upto a certain limit MoOx based device can be annealed . You can go through the articles attached.
Without passivation layer: Article Carrier‐Selective Contact Based Silicon Solar Cells Processe...
With passivation layer:
DOI: 10.1038/NENERGY.2015.31
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