The excellent properties of silicon oxynitride (SiON), such as high transparency, adjustable refractive index and good stability, add to the attractiveness of this amorphous material for application in integrated opticsSilicon oxynitride (SiON) in micro-electro-mechanical system (MEMS) integration due to its composition-dependent tenability in optical, electronic and mechanical properties. silicon oxynitride films with different oxygen and nitrogen content deposites by RF magnetron sputtering. Energy dispersive X-ray (EDX) spectroscopy and Fourier-transform infrared (FT-IR) spectroscopy employe to characterize the SiON films with respect to stoichiometric composition and atomic bonding structure. High-quality SiON layers are reliably grown by chemical vapor deposition (CVD). However, the hydrogen-containing precursors applied in the deposition processes will inevitably lead to incorporation of hydrogen (H) bonds (Si-H, N-H, O-H) into the as-deposited SiON films. Those bonds, are well-known to cause absorption peaks at wavelength ranges around 1.5 μm. Annealing at high temperature (>1100˚C) can be applied to reduce the Hcontent and to achieve SiON-based optical waveguides with low loss . However, the high temperature required for sufficient hydrogen removal induces several undesired side effects such as inter-layer diffusion and micro-cracks.