The growth axis of SiC crystal is c-axis(0001) plane, and it is off-cutted 4 degree in direction (mostly for 4H- SiC). What is the meaning and importance of this off cut. If I take XRD, I can't find resolved peak (Supposed to powder XRD). For this, we need to corrected the off-axis, i.e, off-cut correction. Why this, and what tells these things?