We knew that bandgap in SiGe is mole fraction dependent. It means the bandgap of SiGe decreases with increasing germanium mole fraction. Resulting better tunneling current, but some critical value in tunneling current shows not same trends. Actually tunneling current is dependent on effective bandgap and effective mass.
Can you explain clearly with the suitable formula?
Why tunneling current is not following same trends?
What is happening behind the effective bandgap and effective mass of SiGe after some critical value(above 35 %Ge)?
Hi Shiromani,
You are right about the bandgap and effective mass being the crucial parameters on dictating overall tunneling current. To find the correlation between the mole fraction and effective mass, you have to look at the published papers on SixGe1-x systems.
There are many papers, both theory and experiment, on this well established system.
To the zeroth order, Egap depends on the vegards law http://en.wikipedia.org/wiki/Vegard%27s_law
Hope this helps.
Mahesh
Thanks
Mr. Mahesh
Yes, You are right. I have seen allot of paper. In Si/SiGe system , the bandgap of SiGe having linear relation with mole fraction E_g(SiGe)=1.084-0.42x . If we co-related this with E-k band theory Then in SiGe, mole fraction Ge directly change the curvature. The change curvature also changes the effective mass m*. Can I use this treatment for Tunnel FET or Junction less Tunnel FET? Suggest me.
Shiromani
Please read this paper from my colleague http://ieeexplore.ieee.org/xpls/abs_all.jsp?arnumber=6220244&tag=1
She has done few years worth of work on this paper and she will be right person to guide you through.
If you cannot access it, please let me know.
I can send it you.
Mahesh
Good morning, Mahesh
Here I am unable to download this paper form given link.
Can you please send me this paper????????
my mail id:
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