The question is largely a repeat of

https://www.researchgate.net/post/What_is_deep_trap_and_shallow_trap_in_semiconductors

Thanks, but how does it affect conductivity when we have a heterojunction semiconductor? How can we estimate it?

If the trap will be shallow, less energy will be required to excite an electron to take part in conduction while more energy will be needed to set an electron free from a deep trap.

Therefore we can say that there is an inverse relation between the depth of a trap and conductivity of the alloy.

In addition of what Dr. Rehman says, deep traps can be recombination centers, i.e. decrease conductivity. Shallow traps can trap carriers and after a while  release them again in the band.

The conductivity depends mostly on the number of free electrons for n-type material [holes for p-type] which show a temperature dependence of exp{–(Ec-Ed)/(2kT)} [for p-type, accordingly exp{–(Ea-Ev)/(2kT)}] where Ev and Ec are valence and conduction band edges and Ed and Ea are donor and acceptor levels. Compared to an intrinsic semiconductor where the corresponding term is  exp{–Eg/(2kT)}  there are more carriers in doped material at the same temperature (because the energies to free the carriers are much smaller than the badgap Eg), and you can esily determine Ed [Ea] from low temperature measurements of the conductivity, shown in the sketch attached.