I have some optical elements made of GaAs; I would like to construct upon them other structures made of Gold and/or SiO2, and then measure the system at 5 or 10 Kelvin; there will be multiple measurement sessions, so the structure will be subject to repeated temperature changes from 300 K to 5-10 K .
Since the coefficient of thermal expansion of the three material is very different, in particular the metal, do you know what issues may I encounter?
I don't know much about the topic, but I have not yet seen any such combination, most probably because of issues like , i.e. loss in adhesion/deformation of Gold on GaAs, or mechanical stress, etc. Do you have more precise info about the topic, and/or some example?
Thank you in advance,
Best Regards,
Badrul Alam
The coefficients of thermal expansion of materials used in multilayer are rather important for structures and junctions in microns or less. Very first thing you must do very slow cooling and try to reduce number of thermal cycles.
First study the dielectric behaviour of your dielectric layer at 5K. Many dielectric materials show structural phase change at low temperature.
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