Hello dear all,
Please, I need help for an issue that I have been struggling with for a long time! I am simulating EQE (External Quantum Efficiency) of an heterojunction solar cell with SILVACO ATLAS. The emitter is n-type MoS2 with Eg=1.88eV (~665nm) and the absorber is c-Si with Eg=1.12eV (~1100nm). However, in the simulated EQE, absorption never stops under the bandgap! I have explored several avenues without success ( optical constants, several parameters, ....). Has anyone already faced a similary problem or would you have any idea? Note that I have already tested the method of calculation of the EQE on a basic solar cell and it works perfectly! Please find attached an image of the problem and one reference image showing normal EQE that I have also simulated on a simple c-Si solar cell structure.
Thanks in advance,
Bienlo ZERBO
Silvaco ATLAS software is a physically-based two and three
dimensional device simulator that predicts the electrical
behavior of semiconductor devices at specified bias conditions.
This software is also a suitable simulation tool, which considers
the different mathematical models, solves them, gives the
simulated structural design and the desired parameters as output
result. simulation can performed using physical Langevin
recombination model. The Langevin recombination is dominant
in organic solar cells. Organic materials are characterized by
low mobility.
Dear Bienlo Zerbo ,
Please review the parameters of the substrate specially the band gap.
You can also start with a material from the material library which is used in the tutorials of the simulator.
Best wishes
Dear ميسم شهاب ,
please contact dr. Ahmed Shaker, a member of our lab he can give you advise from where you can get Silvaco. This is his link on the research gate:https://www.researchgate.net/profile/Ahmed-Shaker-7
Best wishes
Thanks a lot... I am still I am still looking for the soltion if anyone has a response....
- Badges
- Science topic