Persistent luminescence, the phenomenon where materials emit light after the excitation source is removed, is influenced by several factors related to material properties, defect states, and external conditions. Here are the key factors:
1. Host Material Composition:
Crystal Structure: The type and symmetry of the host crystal affect the distribution and stability of trapping centers.
Energy Band Gap: A suitable band gap ensures effective charge trapping and release.
Lattice Stability: A stable lattice prevents quenching of luminescence.
2. Dopants and Co-Dopants:
Type of Dopant: Activators like rare-earth ions (e.g., Eu²⁺, Dy³⁺, Ce³⁺) or transition metals (e.g., Mn²⁺) determine emission wavelength and efficiency.
²⁺).Co-Dopants: Co-dopants modulate trap depth and density, enhancing afterglow duration (e.g., Dy³⁺ as a co-dopant in SrAl₂O₄
Concentration: Optimal doping levels are crucial; too much or too little can reduce efficiency or quench luminescence.
3. Defect States and Trap Levels:
Trap Depth: Deeper traps prolong luminescence but may reduce intensity, while shallow traps release energy too quickly.
Trap Density: A balance between sufficient traps for charge storage and efficient recombination is critical.
Defect Engineering: Controlled introduction of defects enhances trapping mechanisms.
4. Excitation Source:
Wavelength: The excitation light wavelength must align with the absorption spectrum of the material.
Intensity: Higher excitation intensity increases the number of trapped carriers.