Can any one suggest me the fabrication steps of a dual metal gate (gate in which two metals are joined together (lateral) to form a dual material gate ) MOSFET/FinFET.
There is no such process in practice. I have seen theoretical work showing benefits of two different metals side by side, but am not aware of any practical way of making such structures at least for small gate length. Currently, dual metal integration (typically one for NFET and one for PFET) is done using a lithography step and as such the location of the boundary between the two metals is subject to mask overlay errors.