I have been working on a device for which I need to know the concept behind the constant current method. I have seen many references in some places where they consider the aspect ratio of the device multiplied with 10e-6; in some papers, just a constant value is taken as the reference for the calculations. For reference, I'm mentioning a paper where it is used; regulating with such a concept for memory calculations doesn't find it well, so if anyone knows the physics behind it, please share.

My major doubt is what should be the ideal constant for the calculation of the constant current method with aspect ratio (W/L).

reference - @article{yan2021high, title={High speed and large memory window ferroelectric HfZrO₂ FinFET for high-density nonvolatile memory}, author={Yan, Siao-Cheng and Lan, Guan-Min and Sun, Chong-Jhe and Chen, Ya-Han and Wu, Chen-Han and Peng, Hao-Kai and Lin, Yu-Hsien and Wu, Yung-Hsien and Wu, Yung-Chun}, journal={IEEE Electron Device Letters}, volume={42}, number={9}, pages={1307--1310}, year={2021}, publisher={IEEE} }