When inspecting operating crystalline silicon PV modules by infrared thermography (IRT), the resultant thermal images usually present specific thermal image patterns, according to each type of fault (e.g. cracks, PID, failed bypass diode, etc). It is also known that when a PV module is short-circuited (SC) under illumination, its thermal image temporarily shows a so-called "patcwhork" pattern, with some cells apparently warmer than others (in some cases with a ΔΤ up to 5-10oC or even more). In this case, the several warmer cells are not actually related with faults or hot spots. Besides, this pattern is observed even in brand new modules. Moreover, such a pattern is always the same for the same module; which means that random cells but always the same cells are warmer or colder. If the same module is then inspected again with IRT under normal, operating conditions (i.e. at MPP), assuming there is no other fault occurring, it will normally present a uniform temperature distribution and pattern, as for a "healthy" module.
In my knowledge and experience, it is erroneous to say that under SC conditions such a "patchwork" pattern is related with occurring failures, cracks, mismatches, etc, as it is mentioned in some articles. On the other hand, trying to explain this "effect" in a physics/material/electrical point of view, I cannot conclude to a certain explanation. I have a suspicion that it may has to do with the inevitable difference in the quality (and, thus, Isc) of each cell, in the cell matrix of the module, but it's a bit strange to me that this causes such high temperature differences, and only under SC conditions.
Could anyone have an explanation on this issue or a point to discuss it further?
Thanks in advance.