I would like to back etch my GaAs substrate (using Citric Acid: Hyrdogen Peroxide mixture) whilst protecting the GaAs device layers.
One method would be to use silicon dioxide or silicon nitride hard mask. Since the removal of Silicon Dioxide/Nitride hard mask may also affect the device layer. I am wondering is there way to achieve the same using any resists?
Victor V Solovyev
Most photoresists will definetely withstand this etch procedure. (One problem you may face is the photoresist peeling off from the substrate during this long-time etch. Then just try to hard bake the photoresist layer after development.)
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Sushanth Kini Manjeshwar
Thank you. I will definitely try whether the resists i currently use can withstand the etch process.
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