I am trying to etch an array of 12 to 30 micron holes in a 10 cm x 10 cm x 10 micron thin aluminium and SS foil using photo-chemical etching. The distance between two holes (pitch) will be 100 microns. Need guidance with few queries.
1. Is there any dry film resist that I can use?
2. What should be the thickness of the resist for making above holes?
3. Any other things that I should be careful about?
Thanks
Hi Deval,
Looking at the dimensions of the holes (30um) and assuming isotropic etch behaviour the depth of the hole in relation to the distance (2x30 vs 100 um) should not be a problem. The only thing you need to take care of is that the adhesion of your resist is good and you do not get lateral etching under the mask. For etching metals you can best use a positive resist (JSR, Hoechst, Shipley etc). For metals you do not use a primer for adhesion but baking the sample at 100C before aplying the resist will make sure adhesion on Al is ok. A normal post exposure bake of 90C should be ok to be able to do the wet etch. I would choose a resist thickness of ~1.5 um. The resist normally does not get attacked much by acidic or basic solutions.
Hope this will help you.
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