both are well known quasi two-dimensional materials with complimentary lattice dynamical and mechanical properties making them ideal for heterostructure devices. The MoS2 is semiconducting whereas the 2D graphene is highly conductive. One can envisage making field effect transistors from these heterostructures.
Dear Jame,
If you mean MoS2 on Graphene, then yes, MoS2 remains semiconducting when put or grown on top of graphene. In fact, people have measured bandgap of MoS2 placed on top of Graphite using STM and STS. See the attached link.
http://pubs.acs.org/doi/abs/10.1021/nl501133c
Dear Nihit Saigal
The MoS2 is material which have similar as graphene structure, but not graphene material.MoS2 have the band gap indirect and direct band gap similar as material for semiconductor . The question is how define this material is right the material for semiconductor material.
Dear Jame,
I misunderstood your question. Your question is quite interesting and I want to understand the answer to it too. I found this interesting discussion on the web. (see the attached link ).
https://www.physicsforums.com/threads/why-doesnt-graphene-have-a-band-gap.773415/
Unlike graphene, TMDCs such as MoS$_2$ and WS$_2$ have a finite band gap in the visible frequency range, which is indirect when in bulk (many layer) form, but becomes direct in the single 2D (trilayer) limit--where two S-layers are separated by a layer of Mo or W metal atoms. See e.g. K. F. Mak, C. Lee, J. Hone, J. Shan, and T. F. Heinz, Phys. Rev. Lett. 105, 136805 (2010); A. Splendiani, L. Sun, Y. Zhang, T. Li, J. Kim, C. Y. Chim, G. Galli, and F. Wang, Nano Lett. 10, 1271 (2010).
In addition, several works have reported the existence of edge states in the gap of finite MoS2 trilayer systems under different conditions. It seems that the origin is the marginal topological properties of the MoS2 single-valley Hamiltonian (see e.g. arXiv 1511.00866).
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