I hope to fabricate 0.5 nm gating length FET using 2D material. I am very confusing the possibility and the worthy of this research. Look forward any comment from you. Thanks.
Ahmedullah Aziz
Using the conventional Silicon based technology, it will not be possible. There are fundamental physical limits to the achievable minimum gate length. The equation in the attached figure shows the minimum achievable gate length using conventional MOS physics. Here, m is the mass of free electron and Es is the electric field at the surface of the MOSFET channel.
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