In order to decrease the concentration of two-dimensional electron gas at the interface of AlN/GaN by 10% , a fixed negative charge was added to the interface between the cap layer and the air. And we need to see the addition of fixed negative charge before and after the longitudinal energy band diagram contrast.
I added a fixed amount of negative charge to the surface of the device, and the channel did not reduce the corresponding electron gas concentration.
The structure of the device is sapphire/GaN/AlN (1nm)/AlGaN (23nm)/GaN (2nm) .
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You'd add the surface charge into the cap layer charge distribution as a surface delta function
Dear Chen Cai ,
If you show the structure of your transistor and the locations of the added sheet charges one can give specific answer.
But a conceptual answer is that in any capacitor structure charging one electrode by a charge Q must influence an equal and opposite sign charge at the other electrode.
Best wishes
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