I have a MOS structure- Al/HfO2/Si. I want to remove the aluminium metal contact without harming/etching the underlying hafnium oxide film. Can Nitric acid do that since hafnium is unaffected by all concentrations of nitric acid?
Dear Shweta Tomer use dilute HCL, FeCl3: H2O or NH4SO4 can etch Al but not oxide. First, apply on a test sample.
https://transene.com/aluminum/
Maybe buy a commercial product ...
@Shweta Tomer,
I don't think you can use nitric acid in your case because it reacts with HfO2. I agree with Martin to use Aluminium etchants from his link.
Thank you for your quick response everyone.
I would like to mention here that the Al metal contact is 500-600 nm thick and I was not able to remove it with nitric acid (69%). However, thinner contacts could be removed leaving their imprint on the film. (Pic of the sample attached).
Martin Owen Patton and Xuhua Wang thank you for the suggestion. However, this etchant does not affect SiO2 SiNx but might etch HfO2.
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