In the paper（DOI: 10.1103/PhysRevB.83.245207）, there is a formula for calculating the carrier concentration. It is said that the degeneracy factor for calculating the carrier concentration is the number of electron configurations occupying the defect state, so the degeneracy factor for the state Cd vacancy (considering the spin) in CdTe is 6, and the degeneracy factor for Cu replacing Cd is 4. But I calculated that the degeneracy factor of the Cu gap defect formed by Cu replacing Cd is 2. Since the neutral Cu substitution for Cd does not introduce electrons and holes, Cu is still +2 valence, so I conclude that the degeneracy factor of the above defect is 2. What is the correct method?
Usually if that state is an electron state the degeneracy is g = 2. If that state is a hole state the degeneracy is g = 4.
The degeneracy of a state is equal to the number of electrons or holes that can exist on that state (a singlet state g = 1 is 2 electrons of opposite spin on that state, there is no other possibility, a doublet state g = 2 is 1 electron on that state, there is possible a second electron of opposite spin on that state, a triplet state g = 4 is 2 parallel electrons on that state, there are 4 possibilities of pairing the electrons)
https://www.differencebetween.com/difference-between-singlet-and-triplet-state/
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