Someone posted a similar question but I have a further question on strain (increase/ decrease atom distance). So I know that the distance increases and decreases the bandgap distance. But can it shift it to turn an indirect to direct bandgap in semiconductors. If so what is the physicality of this and are there any reference material that you suggest on the topic. For example Ge is indirect bandgap (between the Gamma and L valley) but with strain it shifts the gap to direct. Does this imply that L valley shifts momentum or does this mean that it raised the band and know we are calling the new lower band the conduction band. Thank you
Dear Respected colleague Bruce,
welcome!
With straining Germanium both its direct band and indirect band gaps decrease but the rate pf the decrease of the direct band is greater such that above certain strain the direct band gap gets smaller than the indirect band gap.
This may be an explanation for your question.
Please for more information please refer to the link:https://arxiv.org/pdf/1606.01668.pdf
Best wishes
Dear Respected colleague Bruce,
welcome!
With straining Germanium both its direct band and indirect band gaps decrease but the rate pf the decrease of the direct band is greater such that above certain strain the direct band gap gets smaller than the indirect band gap.
This may be an explanation for your question.
Please for more information please refer to the link:https://arxiv.org/pdf/1606.01668.pdf
Best wishes
firstly, the significant efforts have been undertaken in the band gap engineering of germanium in order to overcome this energy difference. Applying high amounts of tensile strain in Ge should lead to a direct band gap behavior, by using the laser ablation for hitting the materials (Ge or Si) its jugged the bad gap
Dear Bruce Br
I think these links ( a paper and related thesis) are useful:
Paper link: https://ieeexplore.ieee.org/document/4294245
Thesis link: https://www.iue.tuwien.ac.at/phd/dhar/diss.html
Regards.
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