Might find this to be a good reference: https://reader.elsevier.com/reader/sd/pii/S0368204815001486?token=2A5FFB142232A0FA1B0EB160F7C8A8C23A1216468BE502A6B327BFF126FE81BDC20C732D372C129073B2193392E2D738

Thanks for sharing this!

Please look at the following below links which may help you in your analysis:

https://www.jst.go.jp/chizai/en/cips_details/pdf_2/5-20.pdf

https://als-technology.com/english/intr.html

Thanks

Thank you!

LEIPES essentially work like standard IPES (isochromat mode) in which you ramp the energy of the incident electrons and you detect one fixed photon energy. If you look at an energy diagram of the process, you can understand the energy of the unoccupied states.

Importantly, in standard IPES setups, the detected photon energy (ca. 9 eV) (and for a big part the energy resolution) is defined by a bandpass filter usually consisting in a gas and a CaF2 window. In this case, to record usual IPES you have to employ incident electron energy varying in the range 5-15 eV.

For LEIPES, the main trick is to change the usual bandpass filter to commercially available optical filters which allow detecting lower energy photons (6 eV or less) with better resolution. Consequently, the incident electron energy you employ needs to be much smaller, which can be interesting for sensitive materials which are less prone to degradation at lower energies. One compromise of LEIPES is that because a retarding field is applied between the electron gun and the sample to slow down the electrons, you cannot do angle-resolved IPES, at least as far as I know with the commercial machine. But AR-LEIPS was employed in a recent publication (title below), so I guess a modified electron gun has been devised by prof. Yoshida.

Preprint Accessing the conduction band dispersion in CH3NH3PbI3 single crystals