Interested

Without a doubt I believe so.

The linked paper is one where the researchers have doped TiO2 nanoparticles with nitrogen and have shown a large change in bandgap. This shows that it is possible for doping to have a large effect even when the material properties are dominated by the quantum level.

The second part of your question involving specific applications remains more of an open question, but I do believe that it is possible to apply knowledge gained on the bulk scale from doped materials like silicon to nanoparticles.

Article Enhanced Nitrogen Doping in TiO2Nanoparticles

The answer of cheistopher recommend

For more details effects of doping on energy gap in semiconductors has two directions. The first tipe effect is reducing the energy gap due to doping activation energies of acceptors and donors inside the energy gap depending on the type of dopin, this effect occurres for all type of semiconductors from small to high energy gap semiconductors

The second type of doping is high doping effect in semiconductors that creates a large number of free carriers and accordingly produces an encrease in the energy gap value but depends on the semiconductor energy gap. it effect is large for smal energy gaps and small f large. For example the energy gap of InSb increases from 0.2eV to about six times of its value to about 1.2eV while for ZnS the encrease is about 0.1eV

this phenomenon is called burestin effect. For more details you can see the article published by

M. S. Omar and F. Gorges 2006

"the optical energy gap dependence on both carrier concentration and intrinsic enegy gapin n-type semiconductors"

published in Materials science in semiconductors