I have an AlN sample and the EDX data show me the at% of a single atom such as Al, N and O . In order to measure the at% AlN , I have to use the chemical formula 2AlN = 2Al + N 2 . should I use the at% of a single N or I have to calcualte the at% of N2 ?
Quite a strange question. You have a mix of Al2O3 and AlN solid phases and you have no N2 molecules at all, if we say about solid films. So, the answer is: "use the atomic % of N".
Your problem, as I can understand from the data presented is a AlN film on Al2O3 substrate. Is it right?
If so, the EDX method is not good in this case: electrons with energies of more than 5 keV (EDX) penetrate quite deeply into a solid (more than 500 nm) and, apparently, you observe an analytical signal from both the film (AlN) and from the substrate (Al2O3). For an accurate answer, you need a depth profiling analysis using one of the methods: XPS, SIMS, AES, LEIS, RBS ...
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