I am a nanopore researcher and would like to etch away the thin oxide layer that may form on SiN under ambient conditions over time. I am aware that I can use piranha solution. however, how much of the SiN will this etch? Even a few nanometers of etching will impact calculations and assumptions for experimentation. Below is the typical structure of the nanopore. Over that free-standing SiN, it is likely that an oxide layer forms. I want to get rid of it without etching away at the thickness of the SiN
Flavio Giacomozzi
a few seconds dip in buffered HF or diluted HF removes the oxide without affecting the SiN
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