17 December 2022 1 7K Report

I'd like to wire bond to a 100 nm Au layer, but I think I am penetrating the underlying dielectric and shorting the underlying gold layer.

Layer stack:

  • 100 nm Au (pad)
  • 300 nm SiO2
  • 100 nm Au
  • Thermal oxide substrate

Is it possible to achieve ball- or wedge- bonding without damage to the film stack? I have only tried using wedge-bonding.

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