I have seen literature with Pulsed laser deposition of Gallium nitride thin film using Nitrogen gas atmosphere. Is it possible to use Argon gas atmosphere?
Of course you can use Ar to deposit GaN. But, The Nitrogen deposited thin film would have better quality and less defects than the Ar one.
Argon and Nitrogen have different physical and chemical properties.
Argon is for all intents and purposes totally inert. Nitrogen is reactive, but not under any conditions. Furthermore, Nitrogen adsorbs to surfaces more than argon does, this may be an issue and affect on the PLD procedure, but nitrogen is usually cheaper. In addition, it depends on the purity of the Nitrogen. In my opinion 99% N2 is the best.
Good Luck
Azhdast
You need a liquid target pulsed laser deposition system and ammonia for nitrogen source.
Yes, but the film would be slightly nitrogen-deficient. Generally best results would be with Ar/N2 mixture, 5-10% of nitrogen. But it would demand additional optimization run.
It is good to use a GaN target firstly, and I fully agree with the previous suggestion of Dr. Peter Borisovich, indicating Ar/N2 gas mixtures. Of course high substrate temperature are necessary in case of PLD.
K. Sreenivas
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