In the hybrid microstructures with constituents i.e. AB/AC with a common cation "A". Can anybody help me that how does this common cation "A" would benefit the formation of heterojunction? How would it be useful than the case where there is neither any common anion or common cation?
I cannot answer this question in its generality, however can tell that in the case of GaAs/AlGaAs heterostructures the lattice mismatch is minimal. This is very important because of the absence of potential scattering and electron localization in the electron-system layer that forms in the boundary region of two crystals. Hereby one achieves very high mobility two-dimensional electron systems (for this a special graded doping method is developed that keeps impurities away from the two-dimensional electron region), even at very low densities (this is why fractional quantum Hall states could be realised in these heterostructures, and not in Si MOSFETs; with the available laboratory magnets, to go to very low filling fractions, low electron density is a prerequisite).
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