Dear Gaurav

the region where you are checking BTBT rate, that area should come under quantum mesh region and the physics for that region you have to declare (bbt.nonlocaldrives) check the manual for correct physics name. I hope you will definitely get a BTBT rate.

Dear Gaurav

We have done few TFET model in Sentaurus and used BTBT nonlocal model for 3-D structures and we have found BTBT rate for 3-D structure. But I think the latest version of ATLAS also provide an example of Cylindrical TFET. Check this link and the input deck in the right side. Silvaco uses nonlocal btbt model for nanowire TFET. Silvaco is having a huge database. So before providing comments on others work you should be 100% sure.

https://www.silvaco.com/examples/tcad/section40/example24/index.html

here is the program of that link. you can check it.

# SILVACO 2017 # # 2D Cylinderical NW-GAA-TFET # # Reference: # [1] Z. Y. Chen et al., "Demonstration of Tunneling FETs Based on Highly # Scalable Vertical Silicon Nanowires," in IEEE Electron Device Letters, # vol. 30, no. 7, pp. 754-756, July 2009. go atlas ####### VARIABLES ############################################################ # #Channel Length set Lg=.200 #Radius set R=.035 #Oxide Thickness set tOX=.0045 #Source Doping set doping_p=1e19 #Drain Doping set doping_n=1e19 #Channel Doping set doping_channel=1e17 #Gate Metal Work Function set gate_wf=4 #Insulator Permittivity set insul_perm=25 #Drain and Source Length set Lds=.080 # ####### MESH ################################################################# # MESH CYLINDRICAL # X.MESH loc=0.0 spacing=.01 X.MESH loc=$R-.005 spacing=.001 X.MESH loc=$R spacing=.0005 X.MESH loc=$R+.005 spacing=.01 X.MESH loc=$R+$tOX+.0015 spacing=.01 Y.MESH loc=0 spacing=.02 Y.MESH loc=0.01 spacing=.02 Y.MESH loc=$Lds-.005 spacing=.001 Y.MESH loc=$Lds spacing=.0001 Y.MESH loc=($Lg+$Lds)/2 spacing=.02 Y.MESH loc=$Lg+$Lds spacing=.01 Y.MESH loc=$Lg+$Lds+.005 spacing=.01 Y.MESH loc=$Lg+$Lds+$Lds-.01 spacing=.02 Y.MESH loc=$Lg+$Lds+$Lds spacing=.02 # ####### REGIONS ############################################################## # # Source Left REGION NUM=1 NAME=Source MATERIAL=silicon \ Y.MIN=0.01 Y.MAX=$Lds X.MIN=0 X.MAX=$R # Channel Right REGION NUM=3 NAME=Channel MATERIAL=silicon \ Y.MIN=$Lds Y.MAX=$Lg+$Lds X.MAX=$R # Drain right REGION NUM=4 NAME=Drain MATERIAL=silicon \ Y.MIN=$Lg+$Lds Y.MAX=$Lg+$Lds+$Lds-.01 X.MAX=$R # Gate Oxide REGION NUM=5 MATERIAL=sio2 \ Y.MIN=$Lds Y.MAX=$Lg+$Lds X.MIN=$R # Source Air Left REGION NUM=6 MATERIAL=air \ Y.MIN=0 Y.MAX=$Lds X.MIN=$R # Drain Air right REGION NUM=7 MATERIAL=air \ Y.MIN=$Lg+$Lds Y.MAX=$Lg+$Lds+$Lds X.MIN=$R # ####### ELECTRODES ########################################################### # ELECTRODE NAME=SOURCE MATERIAL=Aluminum \ Y.MIN=0 Y.MAX=.01 X.MIN=0 X.MAX=$R ELECTRODE NAME=DRAIN MATERIAL=Aluminum \ Y.MIN=$Lg+$Lds+$Lds-.01 Y.MAX=$Lg+$Lds+$Lds X.MIN=0 X.MAX=$R ELECTRODE NAME=GATE MATERIAL=Aluminum \ Y.MIN=$Lds Y.MAX=$Lg+$Lds X.MIN=$R+$tOX X.MAX=$R+$tOX+.0015 # ####### DOPING ############################################################### # DOPING GAUSSIAN material=Si p.type concentration=$doping_channel \ Y.min=$Lds Y.max=$Lds+$Lg X.max=$R \ Y.char=0.01 X.char=0 DOPING GAUSSIAN material=Si p.type concentration=$doping_p \ Y.min=0.01 Y.max=$Lds X.max=$R \ Y.char=0.025 X.char=0 DOPING GAUSSIAN material=Si n.type concentration=$doping_n \ Y.min=$Lds+$Lg Y.max=$Lg+$Lds+$Lds-.01 X.max=$R \ Y.char=0.025 X.char=0 # ####### QUANTUM MESH ######################################################### # qtx.mesh loc=0 spac=0.0050 qtx.mesh loc=$R-.005 spac=0.0005 qtx.mesh loc=$R spac=0.0001 qty.mesh loc=$Lds-.050+.01 spac=0.00025 qty.mesh loc=$Lds+.01 spac=0.00010 qty.mesh loc=$Lds+.050+.01 spac=0.00025 # ####### MODELS ############################################################### # material material=Si me.tunnel=.22 mh.tunnel=.12 material material=SiO2 permittivity=$insul_perm contact name=GATE workfunc=$gate_wf models qtunn.dir=ydir bbt.nonlocal temperature=300 \ fermi ni.fermi srh auger cvt \ fldmob conmob bgn print method itlimit=5 output band.temp band.param traps u.srh j.electron j.hole j.total qfn qfp # ####### CALCULATIONS ######################################################### # Loop steps=2 # Fig. 3b in [1] Id-Vg characteristics values assign name=Vn n.value=(1.2, .05) solve init solve name=DRAIN vDRAIN=0 vstep=0.025 vfinal=$Vn save outf=quantumex24_Vg0_Vd$'Vn'.str log outf=quantumex24_idvg_Vd$'Vn'.log solve name=GATE vGATE=-0.0 vstep=-.05 vfinal=-.5 solve name=GATE vGATE=-0.5 vstep=0.05 vfinal=1.5 save outf=quantumex24_Vg1.5_Vd$'Vn'.str log off L.END # ####### TONYPLOT ############################################################# # tonyplot quantumex24_Vg1.5_Vd1.2.str tonyplot -overlay quantumex24_idvg_Vd0.05.log quantumex24_idvg_Vd1.2.log \ -set quantumex24.set quit

Dear Gaurav

Were you able to invoke non local in cylindrical tfet? i am facing some problem as well. can you please help? its really urgent