Hi Jan,

Are you dealing with GaAs nanowirs? Durimide should be OK for insulating and easy removal after oxygen plasma etching. So what is the issue with it for your experiments?

Best,

Yang

I am using GaN nanowires with a diameter of up to 2µm. the problem with the Durimide is that we are not able to get rid of it on the upper facette of the nanowire after the post-bake, even with O2-Plasma. Thats a huge problem for the contacting and thus the elctrical characterization afterwards

Any possibility with prolonged curing of Durimide (too heavily crosslinked) or low power of plasma etcher?

I doubt that the curing is to long (> 2 hours at 200°C). At least that's what is recommended by the company. We use 50 Watts in the O2 Plasma. I think thats okay if you regulate the etching rate with the time of etching. Can you recommend other parameters?

Hi Jan,

Please tell me the series number of Durimide you are using—1**, 2** or 7**.

Usually curing takes 20 mins by oven and 4-5 mins by hot plate.

Yang