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Questions related from Tasneem Fatema
I am doing wet etching of InGaAs/InP epixay using HCl:H3PO4:DI and H2SO4:H2O2:DI. I used AZ 5214 photoresist (thickness ~1.9um). I found that, while wet etching, my mesa shrinked and got deformed...
08 April 2025 6,851 5 View
I did SiO2 dry etching using CHF3 (100 W RIE power, 10 mT pressure, 20 sccm CHF3 flow) at 20C. After the etch process, I noticed cracks/peeling off in multiple places of my sample (image...
19 July 2023 7,708 3 View