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We want to run a large number of Monte Carlo simulations to obtain electron trajectories in a thin film at different incident electron enegies, different target thickness and different incident...
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A heterostructure is composed by two different materials like pn junction. The work function refers to the potential difference between the interface of a heterostructure.
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Is it possible to calculate or simulate the penetration length of free electrons with energy about 300 keV in a single crystal? We know DTSA can simulate the penetration length of free electrons...
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