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Hi, I have an issue with depositing TiN with a PEALD. I am using TDAMT as precursor and N2/H2 as reactive gasses in the chamber. Ar is used as purge gas and also as a bubbler gas in the precursor...
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I'm using KOH to etch silicon, unfortunately I see that under a certain etch depth (less than about 250nm) the flanks does not look good because the etch rate is slower compared to the 100 plane...
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