The epi structure of InGaN/GaN LEDs typically includes an electron-blocking layer (EBL). Do LEDs with As- or P-based quantum wells require an EBL too?

This is mostly a question for epi scientists working on phosphide- or arsenide-based LEDs. Epi scientists who, like me, work on LEDs and lasers based on nitride materials (GaN, AlGaN, InGaN),...

05 October 2018 8,150 3 View