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Dear all, I have a question about the operation of an RF Ion source with 3 Molybdenum grids used as sputter source In DIBS (dual ion beam sputtering) system. During the deposition of metals and...
12 May 2020 3,089 1 View
In the case of AL2O3/GaN stack a serious frequency dispersion is observed (Fig1) whereas this problem is negligible in the Al2O3/Si case (Fig.2). Moreover, the increase of the capacitance area...
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In high power devices application, the Si-MOSFET is the most used until now. Recently, GaN-MEMT shows a spectaculaire properties which allows it to replace the Si-MOSFET in the few next years....
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