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Questions related from Ashish Kumar
In AlGaN/GaN HEMT and MgZnO/ZnO HFET, 2deg form. All fabrication results show that 2DEG is measured by hall method and C-V depth profiling. I am bothered about the procedure of the C-V depth...
04 April 2014 3,521 4 View
For proper operation of electronic devices, current should be well controlled. Leakage current is due to minority charge carrier, or it is an unwanted current in the device. What is the on current...
06 June 2013 881 6 View
Raman spectroscopy is a commonly used optical and mostly non-invasive research method, for example for chemical analysis or in solid state physics. Similarly X-ray photoelectron spectroscopy (XPS)...
03 March 2013 1,805 7 View
Band gap of the TiO2 (rutile and anatase) phase is 3.2-3.35 eV. It is approximately equal to the ZnO band gap. Due to an oxygen defect, ZnO is considered as an N-type Semiconductor. Does TiO2...
02 February 2013 6,882 25 View
In Case of AlGaN/GaN HEMT, piezoelectric charge compensate the surface charge density.
12 December 2012 9,690 1 View
