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Dear All, We are interested to do the 'n type doping' of Si nano (or micro) thin film. Generally, we prepare Si thin film by the e-beam evaporation in the molecular beam epitaxy (MBE) set up. We...
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For preparation of reconstructed Si(hkl) substrates, I generally perform the degassing of specimen at ~ 600 °C for 12-15 hours and subsequent repetitive flash heating at ~ 1200 °C for one minute...
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