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Questions related from Ajay Yadav
XPS spectra for GaAs sample implanted with 50 keV silicon ion with fluence of 1e16 ion / cm2 , indicated shift in binding energy of Ga3d and also As3d towards higher binding energy side with...
05 February 2019 1,638 7 View
We have implanted 50 keV silicon ion with fluence of 5e15 ion cm-2 in GaAs sample. The UV-Vis graph (alpha2 Vs. photon energy) showed additional absorption peak (between 1.35 eV to 1.37 eV ). What...
13 December 2018 7,880 3 View