If anyone has a guide or special article on how to theoretically calculate IV and bandgap in graded-gap layers, please share with me? Thank you very much in advance for this!
Dear Jurabek Muzaffar o'g'li Abdiev,
A good published book and articles can be found here:
https://books.google.com/books?id=rMBdfKUciXEC&pg=PA1256&lpg=PA1256&dq=What+are+Si+x+-+Ge+1-x+band+gap+and+their+epitaxy,+voltage+current+characters,+and+theory?&source=bl&ots=GhtD__JNGH&sig=ACfU3U22uHxUrGHis-oe0fiLGIBw-KV5UQ&hl=en&sa=X&ved=2ahUKEwijzI_NpJ_3AhXOnOAKHa_gCjgQ6AF6BAgVEAM#v=onepage&q=What%20are%20Si%20x%20-%20Ge%201-x%20band%20gap%20and%20their%20epitaxy%2C%20voltage%20current%20characters%2C%20and%20theory%3F&f=false
https://journals.aps.org/prb/abstract/10.1103/PhysRevB.82.193204
Dear Jurabek Muzaffar o'g'li Abdiev,
Here below is some auxiliary information:
https://repository.brynmawr.edu/cgi/viewcontent.cgi?article=1054&context=physics_pubs
Staircase band gap Si1ÀxGex ÕSi photodetectors Zhiyun Lo,a) Ruolian Jiang, Youdou Zheng,b) Lan Zang, Zhizhong Chen, Shunming Zhu, Xuemei Cheng, and Xiabing Liu
Department of Physics, Nanjing University, Nanjing 210093, China ~Received 20 October 1999; accepted for publication 19 May 2000!
We fabricated Si12xGex /Si photodetectors by using a staircase band gap Si12xGex /Si structure. These devices exhibit a high optical response with a peak responsive wavelength at 0.96 mm and a responsivity of 27.8 A/W at 25 V bias. Excellent electrical characteristics evidenced by good diode rectification are also demonstrated. The dark current density is 0.1 pA/mm2 at 22 V bias, and the breakdown voltage is 227 V. The high response is explained as the result of a staircase band gap by theoretical analysis. © 2000 American Institute of Physics. @S0003-6951~00!04528-9#
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