Hii , friends , as we know that there are two type of semiconductor materials based on band theory: A) Direct band gap
B) Indirect band gap
Plz explain and help to clarify that which semiconductor material (as maintained above) is more useful for better tunneling current to tunnel devices such tunnel FET.
Note: Plz explain it with suitable verification.
Hello, in order to design tunneling devices, you first understand
the potential discontinuities at the junction interface formed by different semiconductor materials. This is not related with the type. Thus, direct or indirect, this is not important.
The tunneling current is determined by the effective masses and barrier width.
Yes, it does not meaningful about semiconductor type rather than semiconductor dissimilar band gap or discontinuities between the band gap. However the tunneling like embankment of water. If barrier height /potential is enough to licking the barrier rather than drifting carriers as a result of tunneling current.
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