We have built a schottky diode out of solution processed nickel oxide with aluminum contact. We measured the IV at different temperatures and extracted the ideality factor using different methods. All the time we end up with n >10.
Yes, it is possible to get higher ideality factor. This simply means, device is not very good. We have also observed high ideality factor in some cases. Please see my attached papers.
Yes, it is possible, but the value is too high for Schottky diode. The high value of the n
can be referred to various impacts such as interface states, image force
effect, oxide layer, barrier inhomogeneity, tunneling process,
series resistance and non-uniformity distribution of the interfacial
charges.
yes , this is quite possible. this means there are lot of non idealities.
Sure, in a very poor diode. Interface states or bulk defects may be the issue here.
Non-ohmic nature of contact or less gradient of d(V/In-i) value or poor interface usually shows greater n factor.
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